Name: /Tools-Info/S40d60c Mospec To3p
Brand: EstiSource
Availability: InStock

S40D60C MOSPEC TO3P

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S40D60C MOSPEC TO3P

Introduction
Material Composition
Manufacturing Process
Challenges and Limitations
Costing
Properties and Characteristics
Frequently asked questions
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One Click Product Costing

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S40D60C – 600V 40A Fast Recovery Diode

by MOSPEC is a dual fast recovery diode configured in a common cathode arrangement within a TO-3P package, rated for 600V reverse voltage and capable of handling 40A forward current. Designed for high-speed switching and high-frequency rectification, this diode is commonly used in power supplies, motor drives, welding equipment, and inverter circuits. It provides fast reverse recovery performance (typically under 75ns), making it suitable for use in freewheeling diodes, PFC boost circuits, and DC output stages of SMPS designs. The TO-3P package allows excellent heat dissipation and mechanical robustness for demanding industrial power applications.

How EstiSource Helps

EstiSource supports design and sourcing teams by streamlining the acquisition of critical components like the S40D60C diode. From real-time cost insights and alternate part recommendations to trusted supplier links and availability alerts, our platform ensures engineers and buyers reduce procurement time and cost, especially when dealing with high-power semiconductor components.

Why Choose EstiSource for Sourcing

At EstiSource, we bridge the gap between engineering decision-making and reliable sourcing execution. For fast recovery diodes like the S40D60C, we ensure transparency in pricing, authenticity of sourcing, and clarity on technical trade-offs. Our platform is built not just for procurement—but for engineers and buyers to make informed, collaborative decisions that scale from prototype to production.

1. Material Composition

▶

The S40D60C diode consists of:

Semiconductor Substrate: High-purity silicon processed for fast recovery characteristics and doped to create PN junctions.
Copper Leadframe: Acts as the structural support and provides electrical conductivity between diode terminals.
Die Attach & Solder: High-reliability conductive epoxy or silver sintering material used for die-to-substrate bonding.
Epoxy Molding Compound: Encases the diode while offering insulation and mechanical protection.
Nickel/Sn Lead Plating: Enhances corrosion resistance and solderability of leads.
TO-3P Package Shell: Thermally conductive plastic housing with tab mounting for effective heat sink interface.

2. Manufacturing Process

▶

Wafer Fabrication: Starting with silicon wafers, precise diffusion and ion implantation steps form the diode’s junctions.
Die Separation: Individual dies are cut and tested for breakdown voltage and forward conduction behavior.
Die Bonding: Each die is attached to a metal base with conductive adhesive.
Wire Bonding: Aluminum wires connect the dies to external leads in a dual-diode configuration.
Encapsulation: The assembly is encapsulated in epoxy within the TO-3P mold cavity.
Plating & Marking: Leads are plated with tin/nickel and laser-marked for part identification.
Final Testing: Each diode undergoes high-voltage and dynamic recovery testing before packaging.

3. Challenges & Limitations

▶

Thermal Management Needs

While the TO-3P package aids heat dissipation, a proper heat sink interface is essential to operate at full rated current.

Limited Reverse Recovery

Though fast, it's not ultrafast—may not be suitable for MHz-range switching applications.

Sourcing Consistency

MOSPEC parts are not always available across global distribution networks, especially in smaller lots.

Lead Time Volatility

Supply chain disruptions can impact delivery timelines for high-power diodes due to foundry constraints.

4. Costing

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Unit Cost (Bulk B2B): Typically ranges from ₹45 to ₹90 per unit based on volume and source location.
Prototype/Low Volume: ₹100–₹130 per piece due to limited stock and per-piece logistics.

Cost Influencers:

Copper price fluctuations (due to the large leadframe)
Availability of TO-3P package variants
Additional charges for RoHS, UL-certified, or automotive-grade versions

Hidden Costs:

Thermal interface materials (TIM) for mounting
Extra QC steps for high-reliability applications (welding, industrial control)

5. Properties & Characteristics

▶

Maximum Repetitive Reverse Voltage (V_RRM)

600V

Average Forward Current (I_F(AV))

40A

Reverse Recovery Time (t_rr)

~75ns

Forward Voltage Drop (V_F)

~1.2V at rated current

Configuration

Dual Diode, Common Cathode

Package Type

TO-3P (Through Hole, high heat dissipation)

Operating Temperature

-55°C to +150°C

Application Fit

Rectifiers in SMPS, UPS, welding machines, industrial motor drives

6. Frequently Asked Questions

▶

Q1: What is the advantage of using a fast recovery diode?

It reduces switching losses and improves efficiency in high-speed circuits like SMPS and motor drives.

Q2: How do I mount the S40D60C to a heat sink?

Use thermal paste and a mounting screw through the TO-3P tab for efficient heat transfer.

Q3: Can I use this diode for solar inverter applications?

Yes, it’s often used in high-current solar DC-side or inverter freewheeling applications.

Q4: Is this diode RoHS compliant?

Most batches are RoHS compliant, but it’s best to confirm with the supplier or check part markings.

Q5: What are good alternatives to S40D60C?

Equivalent options include HFA40PA60C, MUR3060WT, or STTH6002CW for similar ratings and packaging.

Precision in every estimate, excellence in Service.

S40D60C MOSPEC TO3P

One Click Product Costing

1. Material Composition

2. Manufacturing Process

3. Challenges & Limitations

Thermal Management Needs

Limited Reverse Recovery

Sourcing Consistency

Lead Time Volatility

4. Costing

5. Properties & Characteristics

Maximum Repetitive Reverse Voltage (VRRM)

Average Forward Current (IF(AV))

Reverse Recovery Time (trr)

Forward Voltage Drop (VF)

Configuration

Package Type

Operating Temperature

Application Fit

6. Frequently Asked Questions

Maximum Repetitive Reverse Voltage (V_RRM)

Average Forward Current (I_F(AV))

Reverse Recovery Time (t_rr)

Forward Voltage Drop (V_F)